Process for forming photoresist pattern using contrast enhanceme

Details Process for forming photoresist pattern using contrast enhanceme Process for forming photoresist pattern using contrast enhanceme

1988-02-23

1989-12-26

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430141, 430156, 430168, 430162, 430271, 430273, 430311, 430312, 430329, G03F 726

Patent

active

048897957

ABSTRACT:
A process for forming a photoresist pattern comprises the steps of forming a photoresist layer on an underlying layer, forming a contrast enhancement layer for enhancing the contrast of light entering the photoresist layer on the photoresist layer, selectively exposing the photoresist layer through the contrast enhancement layer to light, and developing the photoresist layer to form a photoresist pattern. The contrast enhancement layer is formed as a layer containing a photobleachable agent and a material soluble in both of a nonpolar organic solvent and an aqueous alkali solution. The material is selected from the group of abietic acid, a derivative thereof, a rosin containing abietic acid as the main component, and a derivative thereof. The contrast enhancement layer is treated and removed simultaneously with development for the photoresist. The stability of a coating solution for the contrast enhancement layer is remarkably high. Therefore, the coating solution for the contrast enhancement layer can be sufficiently resistant to long-term storage.

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Griffing et al., IEEE Electron Device Letters, vol. EDL-4 #1 Jan. 1983 "Contrast Enhanced Photolithography".

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