Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-01-20
1997-08-26
Picardat, Kevin
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438666, 438958, H01L 2144
Patent
active
056610823
ABSTRACT:
Bond pads (394, 106) and bond pad openings (62, 108) are formed such that the bond pad openings (62, 108) are asymmetric to the conductive sections (398, 106) of the bond pads (394, 106). If the bond pads are more likely to lift from the scribe line side of the bond pad (394, 106), the bond pad openings (62, 108) are formed such that the passivation layer (52) overlies more of the conductive section (398, 106) near the scribe line (40). If the bond pads (394, 106) are more likely to lift from the other side, the passivation layer (52) overlies more of the other side of the conductive section (398, 106). In addition to reducing the risk of lifting, contamination problems should also be reduced.
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Howard Clifford M.
Hsu Ting-Chen
Jamison Stephen G.
Travis Edward O.
Meyer George R.
Motorola Inc.
Picardat Kevin
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