Process for forming a polysilicon layer having improved roughnes

Details Process for forming a polysilicon layer having improved roughnes Process for forming a polysilicon layer having improved roughnes

1998-03-27

1999-02-23

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438251, 438253, 438488, 438647, H01L 218242

Patent

active

058743332

ABSTRACT:
An improved method for depositing the polysilicon layer from which a gate pedestal is later formed is described. Deposition takes place in two stages. Initially, the conventional deposition temperature of about 630.degree. C. is used. Then, when the intended thickness of polysilicon has been grown, the temperature is ramped down to about 560.degree. C., without interrupting the deposition process, and growth of the film continues to completion. This is followed by a standard doping step using POCl.sub.3. Polysilicon films formed in this way have been found to have very smooth surfaces because the topmost layer is less subject to uncontrolled grain growth. As a consequence, dielectric layers obtained by oxidizing such films exhibit superior breakdown voltages.

REFERENCES:
patent: 5126916 (1992-06-01), Tseng
patent: 5192702 (1993-03-01), Tseng
patent: 5286668 (1994-02-01), Chou
patent: 5290729 (1994-03-01), Hayashide et al.
patent: 5597754 (1997-01-01), Lou et al.
patent: 5639685 (1997-06-01), Zahurak et al.
patent: 5663090 (1997-09-01), Dennison et al.

Affiliated with

Also associated with

Rating

Process for forming a polysilicon layer having improved roughnes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming a polysilicon layer having improved roughnes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming a polysilicon layer having improved roughnes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-306425