Process for fabrication of spacer layer with reduced...

Details Process for fabrication of spacer layer with reduced... Process for fabrication of spacer layer with reduced...

2005-09-27

2005-09-27

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Reexamination Certificate

active

06949481

ABSTRACT:
Process for fabricating a semiconductor device including steps of providing a semiconductor substrate having formed thereon a semiconductor device; depositing over the semiconductor device a spacer layer, the spacer layer having a first hydrogen content; and applying a treatment to reduce the first hydrogen content to a second hydrogen content. The invention is particularly useful when applied to flash memory devices such as a charge trapping dielectric flash memory device.

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U.S. Appl. No. 10/731,659, filed Dec. 9, 2003, entitled “Process for Fabrication of Nitride Layer with Reduced Hydrogen Content in Ono Structure in Semiconductor Device.”

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