Process for fabricating a DRAM metal capacitor structure for use

Details Process for fabricating a DRAM metal capacitor structure for use Process for fabricating a DRAM metal capacitor structure for use

1998-10-05

2000-06-06

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438235, 438238, 438240, 438254, 438255, 438396, 438397, 438398, H01L 218242, H01L 218249, H01L 218234, H01L 21331

Patent

active

060717734

ABSTRACT:
A process for fabricating a DRAM metal capacitor structure, featuring simultaneous formation of specific bit line, and storage node features, has been developed. The DRAM capacitor storage node is comprised of a stack of tungsten interconnect structures, overlying specific insulator layers, connected by tungsten plugs, formed in the specific insulator layers. Removal of a portion of the upper level insulator layers, exposes a stack of tungsten plugs and tungsten interconnects, that comprise the metal storage node structure, for the DRAM metal capacitor structure. The process of fabricating the DRAM metal capacitor structure, features the simultaneous formation of a tungsten bit line contact plug, and a tungsten storage node contact plug, in addition to the simultaneous formation of a tungsten bit line interconnect structure, and a tungsten interconnect structure, used as components of the DRAM metal capacitor structure.

REFERENCES:
patent: 5281837 (1994-01-01), Kohyama
patent: 5604146 (1997-02-01), Tseng
patent: 5627095 (1997-05-01), Koh et al.
patent: 5643819 (1997-07-01), Tseng
patent: 5691223 (1997-11-01), Pittikoun et al.
patent: 5728618 (1998-03-01), Tseng

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