Process for device fabrication in which a layer of oxynitride is

Details Process for device fabrication in which a layer of oxynitride is Process for device fabrication in which a layer of oxynitride is

1997-10-03

1999-05-18

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, 438762, 438763, 438758, 438775, 438769, H01L21/336;21/31;21/469

Patent

active

059045230

ABSTRACT:
A process for forming a silicon oxynitride layer in an N.sub.2 atmosphere is disclosed. The silicon oxynitride layer is formed by heating a silicon substrate in an N.sub.2 atmosphere for a period of time that is sufficient to form a nitrided layer with a nitrogen content of at least about 5.times.10.sup.13 atoms/cm.sup.2 therein. Afterward, the substrate is further oxidized in an oxygen containing atmosphere for a period of time sufficient to form a silicon oxynitride layer on the substrate with a thickness of at least about 1 nm and a nitrogen content of at least about 5.times.10.sup.13 atoms/cm.sup.2 on the wafer.

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