Process for depositing a SiO.sub.x film having reduced intrinsic

Details Process for depositing a SiO.sub.x film having reduced intrinsic Process for depositing a SiO.sub.x film having reduced intrinsic

1993-07-16

1998-05-12

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427571, 427573, 427574, 427575, 4272553, 438787, 438788, B05D 306, C23C 1640

Patent

active

057502110

ABSTRACT:
A process for reducing intrinsic stress and/or hydrogen content of a SiO.sub.x film grown by ECR chemical vapor deposition, wherein a vapor phase etchant is introduced while growing the silicon dioxide film. The presence of the etchant during the plasma deposition process allows for selective removal of high energy silicon dioxide molecules in the growing film thus reducing intrinsic stress within the film. The use of halogen etchants further reduces the amount of hydrogen present as hydroxyl within the film.

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