Process for defining a pattern using an anti-reflective coating

Details Process for defining a pattern using an anti-reflective coating Process for defining a pattern using an anti-reflective coating

1998-06-19

2000-02-29

Breneman, Bruce

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask resist contains inorganic material

216 40, 438717, H01L 21033

Patent

active

06030541&

ABSTRACT:
A pattern in a surface is defined by providing on the surface a hard mask material; depositing an anti-reflective coating on the hard mask material; applying a photoresist layer on the anti-reflective coating; patterning the photoresist layer, anti-reflective layer and hard mask material; and removing the remaining portions of the photoresist layer and anti-reflective layer; and then patterning the substrate using the hard mask as the mask. Also provided is a structure for defining a pattern in a surface which comprises a surface having a hard mask material thereon; an anti-reflective coating located on the hard mask material; and a photoresist located on the anti-reflective coating. Also provided is an etchant composition for removing the hard mask material which comprises an aqueous composition of HF and chlorine.

REFERENCES:
patent: 5741741 (1998-04-01), Tseng
patent: 5858621 (1999-01-01), Yu et al.
patent: 5883011 (1999-03-01), Lin et al.
patent: 5891784 (1999-04-01), Cheung et al.

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