Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2007-08-07
2007-08-07
Lee, Calvin (Department: 2818)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Reexamination Certificate
active
09971210
ABSTRACT:
A pre-ECD surface treatment. After forming the barrier material (110) and seed layer (112), the surface of the seed layer (112) is treated with an H2plasma to remove surface contamination (122), reduce any CuOx(123), and improve wettability. The ECD copper film (124) is then formed over the seed layer (112).
REFERENCES:
patent: 5403436 (1995-04-01), Fujimura et al.
patent: 5753886 (1998-05-01), Iwamura et al.
patent: 6001736 (1999-12-01), Kondo et al.
patent: 6284649 (2001-09-01), Miyamoto
patent: 6319728 (2001-11-01), Bhan et al.
patent: 6355106 (2002-03-01), Zheng et al.
patent: 6395642 (2002-05-01), Liu et al.
patent: 6743473 (2004-06-01), Parkhe et al.
patent: 2002/0072227 (2002-06-01), Russell et al.
patent: 2004/0023452 (2004-02-01), Wang et al.
Lu Jiong-Ping
Smith Patricia B.
Bardy, III W. James
Garner Jacqueline J.
Lee Calvin
Telecky, Jr. Frederick J
Texas Instruments Incorporated
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