Process for creating a butt contact opening for a self-aligned c

Details Process for creating a butt contact opening for a self-aligned c Process for creating a butt contact opening for a self-aligned c

1998-04-10

2000-01-11

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438586, 438592, 438629, 438637, 438666, 438675, 438238, H01L 218234

Patent

active

060135476

ABSTRACT:
A method for fabricating a memory device, using a butt contact opening, and an overlying SAC structure, to allow connection between a gate structure, and an active device region, in a semiconductor substrate, has been developed. This invention features the use of an organic layer, protecting regions of the memory device from an dry etch procedure, that is used to remove insulator from the top surface, of a portion of the gate structure. A SAC structure, in a SAC opening, supplies the desired connection, via contact to both an active device region, and to the portion of gate structure, that is without the capping insulator.

REFERENCES:
patent: 5275963 (1994-01-01), Cederbaum et al.
patent: 5286674 (1994-02-01), Roth et al.
patent: 5451543 (1995-09-01), Woo et al.
patent: 5459354 (1995-10-01), Hara
patent: 5480837 (1996-01-01), Liaw et al.
patent: 5646063 (1997-07-01), Mehta et al.
patent: 5702981 (1997-12-01), Maniar et al.
patent: 5718800 (1998-02-01), Juengling
patent: 5792684 (1998-08-01), Lee et al.
patent: 5807779 (1998-09-01), Liaw
patent: 5872056 (1999-02-01), Manning
patent: 5907781 (1999-05-01), Chen et al.

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