Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2005-11-08
2005-11-08
Jackson, Monique R. (Department: 1773)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S058000, C427S255140, C427S255180, C427S579000, C427S585000, C427S588000, C438S680000
Reexamination Certificate
active
06962732
ABSTRACT:
Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be accomplished by CVD, PECVD, rapid thermal processing or the like, the substrate temperature is controlled to establish a temperature profile particularly suited to the extreme temperature sensitivities of the deposition rates of organosilicate films such as those deposited from TEOS as a source material.
REFERENCES:
patent: 5098865 (1992-03-01), Machado et al.
patent: 5156820 (1992-10-01), Wong et al.
patent: 5534072 (1996-07-01), Mizuno et al.
patent: 5795833 (1998-08-01), Yu et al.
patent: 5844205 (1998-12-01), White et al.
patent: 5958140 (1999-09-01), Arami et al.
patent: 5977519 (1999-11-01), Sorensen et al.
patent: 6143666 (2000-11-01), Lin et al.
patent: 6225601 (2001-05-01), Beer et al.
patent: 6352594 (2002-03-01), Cook et al.
patent: 6427623 (2002-08-01), Ko
patent: 6451390 (2002-09-01), Goto et al.
patent: 0412 644 (1991-02-01), None
patent: 0 418 541 (1991-03-01), None
patent: 0862 352 (1998-09-01), None
patent: 10144665 (1998-05-01), None
patent: WO 00/02824 (2000-01-01), None
patent: WO 00 29799 (2000-05-01), None
patent: PCT/US 02/26456 (2002-12-01), None
Ekbundit et al., Characterization of film uniformity in LPCVD TEOS Vertical Furnace, 2002 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, pp. 38-42.
Lee et al., The Effect of Patterned Susceptor on the Thickness Uniformity of Rapid Thermal Oxides, IEEE Transactions on Semiconductor Manufacturing, vol. 12, No. 3, pp. 340-344.
Hajjar et al., entitled “Structural and Electrical Properties of Polycrystalline Silicon Films Deposited by Low Pressure Chemical Vapor Deposition with and Without Plasma Enhancement,” Journal of Electronic Materials, vol. 15, No. 5, 1986.
Harshbarger William R.
Takehara Takako
Won Tae Kyung
Applied Materials Inc.
Jackson Monique R.
Stern Robert J.
LandOfFree
Process for controlling thin film uniformity and products... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for controlling thin film uniformity and products..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for controlling thin film uniformity and products... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3507937