Prevention of edge stain in silicon wafers by ozone dipping

Details Prevention of edge stain in silicon wafers by ozone dipping Prevention of edge stain in silicon wafers by ozone dipping

1997-10-07

1999-10-26

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438476, 438959, 438974, 134902, H01L 2131, H01L 21469

Patent

active

059728027

ABSTRACT:
A method of preventing edge stain in silicon wafers from the edge polishing step with an alkaline slurry, the method consisting of formation of an oxide layer by an ozone dipping step prior to edge polishing.

REFERENCES:
patent: 5516730 (1996-05-01), Saeed
patent: 5626681 (1997-05-01), Nakano
Ozonized Ultrapure Water Treatmant of Organic Contamination of Si-Wafer Surface; Proceedings--Institute of Environmental Sciences, p. 380-385 (1993).

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