Pretreatment for electroless deposition

Details Pretreatment for electroless deposition Pretreatment for electroless deposition

2007-08-14

2007-08-14

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S474000, C438S475000, C438S678000, C438S680000, C257SE21170, C257SE21218, C257SE21229, C257SE21319

Reexamination Certificate

active

10934850

ABSTRACT:
Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber includes heating the substrate in a vacuum environment while providing a gas, such as noble gases, hydrogen gas, other reducing gases, nitrogen gas, other non-reactive gases, and combinations thereof. In another embodiment, annealing in a plasma chamber comprises plasma annealing the substrate in a plasma, such as a plasma from an argon gas, helium gas, hydrogen gas, and combinations thereof.

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