Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2008-03-25
2008-03-25
Pham, Ly Duy (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S154000, C365S156000, C365S063000, C365S191000
Reexamination Certificate
active
07349274
ABSTRACT:
Disclosed are a precharge circuit employing an inactive weak precharging and equalizing scheme, a memory device including the same and a precharging method. The inactive weak precharging and equalizing scheme equalizes a non-selected bit line and complementary bit line while sensing and amplifying memory cell data delivered to a selected bit line and complementary bit line to evaluate the voltage difference between the selected bit line and complementary bit line. Then, the scheme precharges the selected bit line and complementary bit line and the non-selected bit line and complementary bit line. This does not require high precharge driving capability for inactivated bit line and complementary bit line equalized to a predetermined voltage level so that precharge current and operating current can be reduced.
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Lee Young-Keun
Song Tae-joong
Mills & Onello LLP
Pham Ly Duy
Samsung Electronics Co,. Ltd.
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