Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-04-12
2005-04-12
Pert, Evan (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C174S068100
Reexamination Certificate
active
06878624
ABSTRACT:
The present invention provides a method for forming an interconnect to a cobalt or nickel silicide having a TiN diffusion barrier. The inventive method comprises providing an initial structure having vias to exposed silicide regions positioned on a substrate; annealing the initial structure in a nitrogen-containing ambient, wherein a nitrogen passivation layer is formed atop the exposed silicide region; depositing Ti atop the nitrogen passivation layer; annealing the Ti in a nitrogen-containing ambient to form a TiN diffusion barrier and an amorphous Ti cobalt silicide between the TiN diffusion layer and the cobalt or nickel silicide and depositing an interconnect metal within the vias and atop the TiN diffusion barrier. The nitrogen passivation layer substantially restricts diffusion between the Ti and silicide layers minimizing the amorphous Ti cobalt silicide layer that forms. Therefore, the amorphous Ti cobalt or Ti nickel silicide is restricted to a thickness of less than about 3.0 nm.
REFERENCES:
patent: 4926237 (1990-05-01), Sun et al.
patent: 5047367 (1991-09-01), Wei et al.
patent: 5880018 (1999-03-01), Boeck et al.
patent: 6271122 (2001-08-01), Wieczorek et al.
patent: 6346465 (2002-02-01), Miura et al.
patent: 6406994 (2002-06-01), Ang et al.
Ebbing et al., General Chemistry, 3rd Edition, 1990, Houghton Mifflin Company, inside front cover (i.e. 2 pages of inside front cover entitled “Periodic Table of Elements”).
Bruley John
Cabral, Jr. Cyril
Hon Wong Kwong
Lavoie Christian
Wagner Tina J.
Cheung, Esq. Wan Yee
Pert Evan
Scully Scott Murphy & Presser
LandOfFree
Pre-anneal of CoSi, to prevent formation of amorphous layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pre-anneal of CoSi, to prevent formation of amorphous layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pre-anneal of CoSi, to prevent formation of amorphous layer... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3386768