Post-ion implant cleaning for silicon on insulator substrate...

Details Post-ion implant cleaning for silicon on insulator substrate... Post-ion implant cleaning for silicon on insulator substrate...

2005-06-15

2008-10-07

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C438S906000, C438S907000, C438S908000, C438S928000, C257SE21043

Reexamination Certificate

active

07432177

ABSTRACT:
A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, in a dry strip chamber, with an energized gas. In a wet clean chamber, the backside of the wafer is treated with an etchant solution to remove completely or partially a thermal silicon oxide layer, followed by exposure of the topside and the backside to a cleaning solution. The cleaning solution contains ammonium hydroxide, hydrogen peroxide, DI water, and optionally a chelating agent, and a surfactant. The wet clean chamber is integrated with the dry strip chamber and contained in a single wafer processing system.

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