Post etch copper cleaning using dry plasma

Details Post etch copper cleaning using dry plasma Post etch copper cleaning using dry plasma

2005-02-08

2008-03-11

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21576, C257SE21577, C438S735000

Reexamination Certificate

active

07341943

ABSTRACT:
A method for post-etch copper cleaning uses a hydrogen plasma with a trace gas additive constituting about 3-10 percent of the plasma by volume to clean a copper surface exposed by etching. The trace gas may be atomic nitrogen or other species having an atomic mass of 15 or greater. The trace gas adds a sputtering aspect to the plasma cleaning and removes polymeric etch by-products and polymeric and other residuals formed during the deposition of dielectric materials or etch stop layers over the copper surface. An anti-corrosion solvent may be used to passivate the copper surface prior to formation of the dielectric materials or etch stop layers.

REFERENCES:
patent: 7084070 (2006-08-01), Lee et al.
patent: 2002/0162736 (2002-11-01), Ngo et al.
patent: 2004/0137750 (2004-07-01), Nemoto et al.
M.R. Baklanov et al., Characterization of Cu Surface Cleaning by Hydrogen Plasma, J. Vac. Sci. Technol. B 19(4), Jul./Aug. 2001, pp. 1201-1211.
Tsung-Kuei Kang and Wei-Yang Chou, Avoiding Cu Hillocks During the Plasma Process, Journal of the Electrochemical Society, 151 (6) pp. G391-G395, (2004).

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