Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-15
2007-05-15
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21575
Reexamination Certificate
active
11020372
ABSTRACT:
A method of manufacturing a semiconductor device having a porous, low-k dielectric layer is provided. A preferred embodiment comprises the steps of forming a porogen-containing, low-k dielectric layer, in the damascene process. In preferred embodiments, pore generation, by e-beam porogen degradation, occurs after the steps of CMP planarizing the damascene copper conductor and depositing a semipermeable cap layer. In alternative embodiments, the cap layer consists essentially of silicon carbide, silicon nitride, Co, W, Al, Ta, Ti, Ni, Ru, and combinations thereof. The semipermeable cap layer is preferably deposited under PECVD conditions such that the cap layer is sufficiently permeable to enable removal of porogen degradation by-products. Preferred embodiments further include an in-situ N2/NH3treatment before depositing the semipermeable cap layer.
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Chen Pi-Tsung
Chen Ying-Tsung
Lu Yung-Cheng
Wu Zhen-Cheng
Isaac Stanetta
Lebentritt Michael
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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