Polysilicon tilting to prevent geometry effects during laser...

Details Polysilicon tilting to prevent geometry effects during laser... Polysilicon tilting to prevent geometry effects during laser...

2005-03-15

2005-03-15

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S663000, C438S926000, C438S321000

Reexamination Certificate

active

06867080

ABSTRACT:
A method is provided for eliminating uneven heating of substrate active areas during laser thermal annealing (LTA) due to variations in gate electrode density. Embodiments include adding dummy structures, formed simultaneously with the gate electrodes, to “fill in” the spaces between isolated gate electrodes, such that the spacing between the gate electrodes and the dummy structures is the same as the spacing between the densest array of device structures on the substrate surface. Since the surface features (i.e., the gate electrodes and the dummy structures) appear substantially uniform to the LTA laser, the laser radiation is uniformly absorbed by the substrate, and the substrate surface is evenly heated.

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