Polysilicon opening polish

Details Polysilicon opening polish Polysilicon opening polish

2001-12-04

2004-06-01

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S529000, C438S626000, C438S627000, C438S720000, C438S721000

Reexamination Certificate

active

06743683

ABSTRACT:

TECHNICAL FIELD
This invention relates to semiconductor substrate processing.
BACKGROUND
A metal oxide field effect transistor (MOSFET) can be formed with a polysilicon gate electrode. A polysilicon gate electrode, defined by dry etching, can be used for the formation of self-aligned sources and drains. In use, polysilicon can undergo electron depletion, resulting in a reduction of effective gate thickness and of transistor speed. The polysilicon gate electrode can be removed after source and drain formation, and replaced by a metal electrode with desirable electrical characteristics. A polysilicon, not a metal, gate is formed initially, however, because it is difficult to etch metal with sufficient control of critical dimensions and with sufficient selectivity to an underlying gate oxide. Further, a metal gate electrode with a relatively low melting point would present difficulties during sidewall spacer formation, a high temperature process.
Removing the polysilicon electrode is challenging if a silicide process is used in forming the transistor, thereby resulting in the formation of a silicide layer on the top of the polysilicon electrode. Silicide is hard to etch, and it acts as a barrier to complete removal of polysilicon.


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