Polysilicon mini spacer for trench buried strap formation

Details Polysilicon mini spacer for trench buried strap formation Polysilicon mini spacer for trench buried strap formation

1998-01-20

2000-03-21

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438246, H01L 218242

Patent

active

06040213&

ABSTRACT:
A method for forming a semiconductor trench capacitor cell having a buried strap uses a substrate having a trench with a conductor separated from walls of the trench by a dielectric material. A portion of the dielectric material to a level below a top surface of the conductor is removed and at least a portion of the space thus formed is filled with a diffusible material. The buried strap is formed by annealing the conductor, the wall and the diffusible material so that conductive elements from the wall and the conductor diffuse into the diffusible material.

REFERENCES:
patent: 5111259 (1992-05-01), Teng et al.
patent: 5156992 (1992-10-01), Teng et al.
patent: 5521115 (1996-05-01), Park et al.

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