Polysilicon capacitor having large capacitance and low...

Details Polysilicon capacitor having large capacitance and low... Polysilicon capacitor having large capacitance and low...

2005-02-22

2005-02-22

Meier, Stephen D. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000

Reexamination Certificate

active

06858889

ABSTRACT:
A process for forming capacitors in a semiconductor device. In one embodiment, a first insulating layer is deposited on the semiconductor device; a trench is formed in the insulating layer; a first low resistance metal layer is formed covering the interior surface of the trench; a first polysilicon layer is formed over the first low resistance metal layer; a first dielectric layer is formed over the first polysilicon layer; a second polysilicon layer is formed over the first dielectric layer; a second low resistance metal layer is formed over the second polysilicon layer; a third polysilicon layer is formed over the second low resistance metal layer; a second dielectric layer is formed over the third polysilicon layer; a fourth polysilicon layer is formed over the second dielectric layer; a third low resistance metal layer is formed over the fourth polysilicon layer until the trench is filled; the semiconductor device is planarized until the first, second and third low resistance metal layers are exposed above the trench; finally, capacitor leads are formed to the first, second, and third low resistance metal layers.

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