Polymer removal from top surfaces and sidewalls of a semiconduct

Details Polymer removal from top surfaces and sidewalls of a semiconduct Polymer removal from top surfaces and sidewalls of a semiconduct

1995-12-11

1998-07-14

Breneman, R. Bruce

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

134 12, 1566431, H01L 21302

Patent

active

057803595

ABSTRACT:
A process for producing a strip removes photoresist and extraneous deposits of polymer residue on the top surface and sidewalls of a post-metal etch wafer. The photoresist and residue are processed simultaneously by a chemical mechanism comprising reactive species derived from a microwave-excited fluorine-containing downstream gas, and a physical mechanism comprising ion bombardment that results from a radio frequency excited plasma and accompanying wafer self bias. A vacuum pump draws stripped photoresist and residues from the surface of the wafer and exhausts them from the chamber.

REFERENCES:
patent: 4673456 (1987-06-01), Spencer et al.
patent: 4875989 (1989-10-01), Davis et al.
patent: 4980022 (1990-12-01), Fujimura et al.
patent: 5382316 (1995-01-01), Hills et al.
patent: 5432315 (1995-07-01), Kaji et al.

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