Polishing pad for in-situ endpoint detection

Details Polishing pad for in-situ endpoint detection Polishing pad for in-situ endpoint detection

2005-03-01

2005-03-01

Hall, III, Joseph J. (Department: 3723)

Abrading

Precision device or process - or with condition responsive...

By optical sensor

C451S008000, C451S009000, C451S010000, C451S041000, C451S526000, C451S527000, C451S533000

Reexamination Certificate

active

06860791

ABSTRACT:
An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

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