PMOS transistor with discontinuous CESL and method of...

Details PMOS transistor with discontinuous CESL and method of... PMOS transistor with discontinuous CESL and method of...

2005-04-29

2009-11-10

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S347000, C257S344000, C257S336000

Reexamination Certificate

active

07615426

ABSTRACT:
A transistor having a discontinuous contact etch stop layer comprising: a substrate having a surface, a gate dielectric on said surface of said substrate, a gate electrode on said gate dielectric, a spacer along a sidewall of said gate dielectric and gate electrode, a source and a drain formed on opposite sides, respectively, of said gate dielectric and said gate electrode, the source and drain defining a channel region having a channel length extending substantially from said source to said drain, in the substrate therebetween, and a contact etch stop layer on said gate and said spacers, and said source and drain. The contact etch stop layer is substantially locally continuous in a direction perpendicular to the channel region length and substantially locally discontinuous in a direction parallel to the channel region length.

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Kumagai, Y., et al., “Evaluation of Change in Drain Current Due to Strain in 0.13-μm-node MOSFETs,” Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, Nagoya, 2002, pp. 14-15.

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