Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-23
2011-08-23
Lee, Cheung (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S625000, C438S629000, C257SE21575, C257SE21579, C257SE21585
Reexamination Certificate
active
08003524
ABSTRACT:
An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen
itrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen
itrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen
itrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.
REFERENCES:
patent: 6037258 (2000-03-01), Liu et al.
patent: 6329021 (2001-12-01), Haug et al.
patent: 6395642 (2002-05-01), Liu et al.
patent: 6441492 (2002-08-01), Cunningham
patent: 6461675 (2002-10-01), Paranjpe et al.
patent: 6525428 (2003-02-01), Ngo et al.
patent: 6713874 (2004-03-01), Hopper et al.
patent: 6977224 (2005-12-01), Dubin et al.
patent: 7070687 (2006-07-01), Chikarman et al.
patent: 2005/0181555 (2005-08-01), Haukka et al.
patent: 2005/0212139 (2005-09-01), Leinikka et al.
patent: 2006/0063375 (2006-03-01), Sun et al.
patent: 2006/0286797 (2006-12-01), Zhang et al.
Gaudet Simon
Lavoie Christian
Ponoth Shom
Spooner Terry A.
Yang Chih-Chao
International Business Machines - Corporation
Lee Cheung
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
LandOfFree
Plating seed layer including an oxygen/nitrogen transition... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plating seed layer including an oxygen/nitrogen transition..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plating seed layer including an oxygen/nitrogen transition... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2649318