Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With heat sink embedded in encapsulant
Patent
1993-11-26
1996-02-20
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With heat sink embedded in encapsulant
257713, 257720, 361704, 361707, 361712, H01L 2334, H01L 2328, H05K 720
Patent
active
054931533
ABSTRACT:
In a plastic-packaged semiconductor device molded by a synthetic resin, a heat sink is formed by a sheet which has a thermal expansion coefficient between 9.0.times.10.sup.-6 /K and 23.times.10.sup.-6 /K and a thermal conductivity greater than 200 W/m.multidot.K, which are selected in relation to those of the synthetic resin. The sheet is manufactured by mixing a first metal of a high melting point with a second metal of a low melting point lower than the first metal and by pressing and sintering the mixture. The first and the second metal may be molybdenum and copper, respectively. Alternatively, the sheet may be a composite sheet composed of a molybdenum mesh interposed between a pair of aluminum layers or a stacked sheet composed of a sintered layer of a mixture of molybdenum and copper and a coated layer of either molybdenum or copper.
REFERENCES:
patent: 4811166 (1989-03-01), Alvarez et al.
patent: 5317194 (1994-05-01), Sako
Arikawa Tadashi
Ichida Akira
Igarashi Tadashi
Tsuchiya Mitsuru
Crane Sara W.
Jr. Carl Whitehead
Tokyo Tungsten Co., Ltd.
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