Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1998-06-10
2000-08-22
Meeks, Timothy
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 71, 427569, 427570, 20419212, C23C 1644
Patent
active
061067377
ABSTRACT:
A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.
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"An Introduction Plasma Etching" by Daniel L. Flamm; pp. 106-109. (No Date Available).
Journal of Vacuum Science and Technology: Part A, vol. 4, No. 3, pp. 729-738, May/Jun. 1986, D. L. Flamm, :Frequency Effects In Plasma Etching.
Endo Shosuke
Hirose Keizo
Imafuku Kosuke
Komino Mitsuaki
Koshiishi Akira
Meeks Timothy
Tokyo Electron Limited
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