Plasma treatment method to reduce silicon erosion over HDI...

Details Plasma treatment method to reduce silicon erosion over HDI... Plasma treatment method to reduce silicon erosion over HDI...

2006-03-28

2006-03-28

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

C438S708000, C438S710000, C438S715000, C438S725000

Reexamination Certificate

active

07018928

ABSTRACT:
A method for reducing the loss of silicon in a plasma assisted photoresist etching process including providing a silicon substrate including a polysilicon gate structure; masking a portion of the silicon substrate with photoresist to carry out an ion implantation process for forming source and drain regions; carrying out an ion implantation process; and, removing the photoresist according to at least one plasma assisted process wherein the at least one plasma assisted process comprises fluorine containing, oxygen, and hydrogen containing plasma source gases.

REFERENCES:
patent: 6379576 (2002-04-01), Luo et al.
patent: 6479396 (2002-11-01), Xu et al.
patent: 6699771 (2004-03-01), Robertson
patent: 6762085 (2004-07-01), Zheng et al.

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