Plasma treatment for copper oxide reduction

Details Plasma treatment for copper oxide reduction Plasma treatment for copper oxide reduction

2005-09-20

2005-09-20

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S573000

Reexamination Certificate

active

06946401

ABSTRACT:
The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.

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