Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-06-25
1999-11-23
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
216 67, 216 68, 438723, H01L 2100
Patent
active
059900172
ABSTRACT:
A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
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Buchberger Douglas
Collins Kenneth
Groechel David
Keswick Peter
Marks Jeffrey
Applied Materials Inc.
Powell William
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