Plasma reactor having an inductive antenna coupling power throug

Details Plasma reactor having an inductive antenna coupling power throug Plasma reactor having an inductive antenna coupling power throug

1996-02-02

2000-06-20

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723I, H05H 100

Patent

active

060773847

ABSTRACT:
The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.

REFERENCES:
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4261762 (1981-04-01), King
patent: 4350578 (1982-09-01), Frieser et al.
patent: 4427516 (1984-01-01), Levinstein et al.
patent: 4427762 (1984-01-01), Takahashi et al.
patent: 4430547 (1984-02-01), Yoneda et al.
patent: 4457359 (1984-07-01), Holden
patent: 4512391 (1985-04-01), Harra
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4711698 (1987-12-01), Douglas
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4786352 (1988-11-01), Benzing
patent: 4786359 (1988-11-01), Stark et al.
patent: 4793897 (1988-12-01), Dunfield et al.
patent: 4807016 (1989-02-01), Douglas
patent: 4810935 (1989-03-01), Boswell
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4870245 (1989-09-01), Price et al.
patent: 4918031 (1990-04-01), Flamm et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5006220 (1991-04-01), Hijikata et al.
patent: 5015330 (1991-05-01), Okumura et al.
patent: 5074456 (1991-12-01), Degner et al.
patent: 5085727 (1992-02-01), Steger
patent: 5169487 (1992-12-01), Langley et al.
patent: 5187454 (1993-02-01), Collins et al.
patent: 5203956 (1993-04-01), Hansen et al.
patent: 5241245 (1993-08-01), Barnes et al.
patent: 5249251 (1993-09-01), Egalon et al.
patent: 5258824 (1993-11-01), Carlson et al.
patent: 5276693 (1994-01-01), Long et al.
patent: 5277751 (1994-01-01), Ogle
patent: 5326404 (1994-07-01), Sato
patent: 5346578 (1994-09-01), Benzing et al.
patent: 5349313 (1994-09-01), Collins et al.
patent: 5392018 (1995-02-01), Collins et al.
patent: 5399237 (1995-03-01), Keswick et al.
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5414246 (1995-05-01), Shapona
patent: 5423945 (1995-06-01), Marks et al.
patent: 5477975 (1995-12-01), Rice et al.
patent: 5514246 (1996-05-01), Blalock
patent: 5529657 (1996-06-01), Ishii
patent: 5556501 (1996-09-01), Collins et al.
Patent Abstracts of Japan, Publication No. 57045927 A, Mar. 16, 1982 (Fujitsu Ltd).
Patent Abstracts of Japan, Publication No. 07288196 A, Oct. 31, 1995 (Tokyo Electron Ltd).
Patent Abstracts of Japan, Publication No. 08017799 A, Jan. 19, 1996 (Plasma Syst: KK).
Patent Abstracts of Japan, Publication No. 62052714 A, Mar. 7, 1987 (Olympus Optical Co Ltd; Toagosei Chem Ind Co Ltd).
Patent Abstracts of Japan, Publication No. 06196446 A, Jul. 15, 1994 (NEC Corp.).
Coburn, W.J. "Increasing the Etch Rate Ratio oSiO.sub.2 /Si in Fluorocarbon Plasma Etching", IBM Technical Disclosure, vol. 19, No. 10, Mar. 1977.
Matsuo, Seitaro. "Selective etching of SiO.sub.2 relative to Si by plasma reactive sputter etching", J. Vac. Sc. Technology, vol. 17, No. 2, Mar.-Apr. 1980.
European Patent Office Communication pursuant to Article 96(2) and Rule 51(2) EPC for Application No. 94307307.2-2208, mailed Jan. 17, 1996.

Affiliated with

Also associated with

Rating

Plasma reactor having an inductive antenna coupling power throug does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma reactor having an inductive antenna coupling power throug, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma reactor having an inductive antenna coupling power throug will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1849042