Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2007-07-17
2010-11-16
Tran, Binh X (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S067000, C216S071000
Reexamination Certificate
active
07833429
ABSTRACT:
A plasma processing method for a plasma processing apparatus which includes, a gas ring, a bell jar, an antenna, a sample table, a Faraday shield, and an RF power source circuit for supplying a power source voltage to the antenna and the Faraday shield. The RF power source circuit includes an RF power source, an antenna connected with the RF power source, a resonance circuit connected in series with the antenna and supplying a resonance voltage, a detection circuit for detecting the resonance voltage of the resonance circuit, and a comparator circuit for comparing the resonance voltage detected by the detection circuit with a predetermined set value. A RF bias voltage is adjusted based on the result of comparison by the comparison circuit.
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Merriam-Webster OnLine Dictionary, “constant”, http://www.merriam-webster.com/dictionary/constant ; 1 page; Date 1832.
Kanai Saburou
Kanekiyo Tadamitsu
Kihara Hideki
Nishio Ryoji
Okuda Koji
Antonelli, Terry Stout & Kraus, LLP.
Hitachi High-Technologies Corporation
Tran Binh X
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