Plasma processing apparatus and plasma processing method

Details Plasma processing apparatus and plasma processing method Plasma processing apparatus and plasma processing method

2004-02-24

2009-10-13

Zervigon, Rudy (Department: 1792)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

Having glow discharge electrode gas energizing means

C118S7230ER, C156S345450, C156S345470

Reexamination Certificate

active

07601241

ABSTRACT:
A plasma processing apparatus having 90% or more of a side wall of an inner wall101of a reaction chamber1covered with a dielectric102, and equipped with an earthed conductive member21ahaving an area of less than 10% of the side wall area of the inner wall101and having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive member21is located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasma9located near a wafer holding electrode14where there is relatively large wall chipping.

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patent: 2001-23967 (2001-01-01), None
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patent: 2003-168678 (2003-06-01), None
M.A. Lieberman, Translated by H. Sato, “Principles of Plasma Discharges and Materials Processing”, Published Nov. 20, 2001 by ED Research Co., p. 116.

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