Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-04-11
2011-12-13
Vinh, Lan (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S009000, C438S706000, C438S710000, C216S071000
Reexamination Certificate
active
08076247
ABSTRACT:
A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.
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Bera Kallol
Buchberger, Jr. Douglas A.
Carducci James
Collins Kenneth S.
Cruse James P.
Applied Materials Inc.
Vinh Lan
Wallace Robert M.
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