Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-04-11
2011-12-20
Vinh, Lan (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S009000, C438S706000, C156S345480, C216S068000
Reexamination Certificate
active
08080479
ABSTRACT:
A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.
REFERENCES:
patent: 5272417 (1993-12-01), Ohmi
patent: 6544380 (2003-04-01), Tomoyasu et al.
patent: 6837968 (2005-01-01), Brown et al.
patent: 6853141 (2005-02-01), Hoffman et al.
patent: 2002/0031617 (2002-03-01), Sumiya et al.
patent: 2004/0035365 (2004-02-01), Yamazawa et al.
patent: 2004/0243269 (2004-12-01), Nakano et al.
patent: 2005/0082255 (2005-04-01), Nagaseki et al.
patent: 2005/0090118 (2005-04-01), Shannon et al.
patent: 2006/0118518 (2006-06-01), Rusu et al.
patent: 2006/0157201 (2006-07-01), Hoffman et al.
patent: 2006/0221540 (2006-10-01), Himori et al.
patent: 2007/0246163 (2007-10-01), Paterson et al.
patent: 1476057 (2004-02-01), None
patent: 1871695 (2006-11-01), None
patent: 3-162583 (1991-07-01), None
patent: 2002246368 (2002-08-01), None
patent: 2003257935 (2003-12-01), None
patent: 2001-0083202 (2001-08-01), None
patent: WO2005/022623 (2005-03-01), None
Official Action Dated May 21, 2010 Issued in Co-Pending U.S. Appl. No. 11/733,764.
Official Action Dated Jul. 28, 2010 Issued in Co-Pending U.S. Appl. No. 11/733,770.
Official Action Dated Aug. 24, 2010 Issued in Co-Pending U.S. Appl. No. 11/734,040.
Official Action Dated Aug. 4, 2010 Issued in Co-Pending U.S. Appl. No. 11/733,913.
U.S. Appl. No. 11/733,764, filed Apr. 11, 2007, Collins et al.
U.S. Appl. No. 11/733,767, filed Apr. 11, 2007, Collins et al.
U.S. Appl. No. 11/733,770, filed Apr. 11, 2007, Collins et al.
U.S. Appl. No. 11/733,913, filed Apr. 11, 2007, Collins et al.
U.S. Appl. No. 11/733,984, filed Apr. 11, 2007, Collins et al.
U.S. Appl. No. 11/734,040, filed Apr. 11, 2007, Collins et al.
Official Action Dated Jun. 4, 2010 Issued in Co-Pending U.S. Appl. No. 11/733,767.
Official Action Dated Jun. 11, 2010 Issued in Co-Pending U.S. Appl. No. 11/733,913.
Bera Kallol
Buchberger, Jr. Douglas A.
Carducci James
Collins Kenneth S.
Cruse James P.
Applied Materials Inc.
Vinh Lan
Wallace Robert M.
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