Plasma nitriding method, method for manufacturing...

Details Plasma nitriding method, method for manufacturing... Plasma nitriding method, method for manufacturing...

2011-06-28

2011-06-28

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S021000, C438S113000, C438S460000, C438S701000, C257SE21240, C257SE21223, C257SE21597

Reexamination Certificate

active

07968470

ABSTRACT:
A nitriding process is performed at a process temperature of 500° C. or more by causing microwave-excited high-density plasma of a nitrogen-containing gas to act on silicon in the surface of a target object, inside a process container of a plasma processing apparatus. The plasma is generated by supplying microwaves into the process container from a planar antenna having a plurality of slots.

REFERENCES:
patent: 2002/0004277 (2002-01-01), Ahn et al.
patent: 2005/0106896 (2005-05-01), Fukuchi
patent: 1 432 023 (2004-06-01), None
patent: 2000-294550 (2000-10-01), None
patent: 2001 -274148 (2001-10-01), None
patent: 2003-115587 (2003-04-01), None
patent: 2003-133232 (2003-05-01), None
patent: 2003-168684 (2003-06-01), None
patent: 2004-193413 (2004-07-01), None
patent: 02/058130 (2002-07-01), None
Machine language translation of Japan, Publication No. 2004-193,413.

Affiliated with

Also associated with

Rating

Plasma nitriding method, method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma nitriding method, method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma nitriding method, method for manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2683598