Plasma implantation of deuterium for passivation of...

Details Plasma implantation of deuterium for passivation of... Plasma implantation of deuterium for passivation of...

2008-05-27

2008-05-27

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C257SE21334

Reexamination Certificate

active

07378335

ABSTRACT:
A method for fabricating a semiconductor-based device includes providing a substrate including a semiconductor layer, forming a gate dielectric layer on the semiconductor layer, forming a plasma including deuterium, plasma implanting deuterium from the plasma into the substrate, and annealing the substrate to promote passivation of the interface between the dielectric layer and the semiconductor layer.

REFERENCES:
patent: 6326274 (2001-12-01), Rost et al.
patent: 6444533 (2002-09-01), Lyding et al.
patent: 2005/0255684 (2005-11-01), Koldiaev et al.
patent: 2006/0270192 (2006-11-01), Cheng
D. Misra and R.K. Jarwal, “Interface Hardening with Deuterium Implantation,” Journal of the Electrochemical Society, 149 (8) G446-G450 (2002).

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