Plasma etching method and apparatus

Details Plasma etching method and apparatus Plasma etching method and apparatus

2011-03-15

2011-03-15

Alejandro, Luz L. (Department: 1716)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C438S710000

Reexamination Certificate

active

07906033

ABSTRACT:
A plasma etching apparatus for etching semiconductor wafers. The plasma etching apparatus has a reaction tube made of a dielectric material and a high frequency antenna located around the reaction tube for generating a plasma inside the reaction tube. The high frequency antenna has a sloped segment that produces a relatively large capacitive coupling with the reaction tube. The high frequency antenna is moved by a driver around the reaction tube in a horizontal plane.

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