Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-01-08
1994-03-08
Dang, Thi
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156646, 156345, H01L 2100
Patent
active
052923991
ABSTRACT:
An improved plasma etching apparatus is disclosed for the plasma etching of semiconductor wafers. The improvement includes conductive means for inhibiting arcing from electrical charges accumulating on one or more non-conductive protective surfaces on members at rf potential within the apparatus, such as the metal pedestal which supports the wafer being etched and supplies the rf potential to it, and the clamping ring mechanism which clamps the wafer to the pedestal. The conductive means may include one or more conductive plugs extending through one or more of the protective surfaces or a conductive ring surrounding the wafer on the top surface of the metal pedestal. The conductive material is selected from the class consisting of carbon; a silicide; titanium nitride; a carbide; and a semiconductor such as silicon doped to provide a resistivity ranging from about 0.001 to about 20 ohm-cm.
REFERENCES:
patent: 4350578 (1982-09-01), Frieser et al.
patent: 4612432 (1986-09-01), Sharp-Geisler
patent: 4711767 (1987-12-01), Diederich
patent: 4793975 (1988-12-01), Drage
patent: 4871421 (1989-10-01), Ogle et al.
Groechel David W.
Lee Terrance Y.
Luong Samuel
Nitescu Petru N.
Redeker Fred C.
Applied Materials Inc.
Dang Thi
Taylor John P.
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