Plasma etch with trifluoroacetic acid and derivatives

Details Plasma etch with trifluoroacetic acid and derivatives Plasma etch with trifluoroacetic acid and derivatives

1996-05-13

1997-05-06

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 75, 216 79, 134 11, 134 12, 438721, 438723, 438724, H01L 2100

Patent

active

056267754

ABSTRACT:
The present invention is directed to the etching of a material selected from the group consisting of silicon dioxide, silicon nitride, boronphosphorus silicate glass, fluorosilicate glass, siliconoxynitride, tungsten, tungsten silicide and mixtures thereof under plasma etch conditions, particularly for cleaning operations to remove silicon dioxide or silicon nitride from the walls and other surfaces within a reaction chamber of a plasma-enhanced chemical vapor deposition reactor. The etching chemicals used in the etch process are trifluoroacetic acid and it derivatives, such as; trifluoroacetic anhydride, trifluoromethyl ester of trifluoroacetic acid and trifluoroacetic acid amide and mixtures thereof.

REFERENCES:
"PFCs and the Semiconductor Industry: A Closer Look" by Maroulis, et al., Semiconductor International, Nov. 1994, pp. 107-110.
"Some Chemical Aspects of the Fluorocarbon Plasma Etching of Silicon and its Compounds", by Coburn, et al., IBM Journal of Research Development, vol. 23, No. 1, Jan. 1979, pp. 33-41.
Stanley Wolf, et al., in "Silicon Processing for the VSLI Era," Lattice Press, vol. 1, Process Technology, pp. 547-550.

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