Plasma etch apparatus with heated scavenging surfaces

Details Plasma etch apparatus with heated scavenging surfaces Plasma etch apparatus with heated scavenging surfaces

1993-10-15

1995-12-26

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 67, 216 74, 216 80, 1566431, 1566461, 156345, 20429831, 20429834, H05H 100

Patent

active

054779758

ABSTRACT:
The invention is embodied in a method of operating a plasma etch reactor, consisting of introducing a gas into the reactor which disassociates as a plasma into an etch species which etches oxide films on a work piece in the reactor and a non-etching species combinable with the etch species into an etch-preventing polymer condensable onto the work piece below a characteristic deposition temperature, providing an interior wall comprising a material which scavenges the etching species, and maintaining a temperature of the interior wall above the deposition temperature.

REFERENCES:
patent: 4427516 (1983-03-01), Levinstein et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5203956 (1993-04-01), Hansen
W. Coburn, "Increasing the etch rate ratio of SiO/Si In Fluorocarbon Plasma Etching," BM Technical Disclosure Bulletin, vol. 19 No. 10, Mar. 1977.
Seitaro Matsuo, "Selective Etching of SiO Relative to Si by Plasma Reactive Sputter Etching,": J. Vac. Sci. Technol., 17 (2), Mar./Apr. 1980, American Vacuum Society, 1980.

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