Plasma doping apparatus and method, and method for...

Details Plasma doping apparatus and method, and method for... Plasma doping apparatus and method, and method for...

2011-07-05

2011-07-05

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S514000, C438S515000, C118S665000

Reexamination Certificate

active

07972945

ABSTRACT:
A top plate, disposed on an upper portion of a vacuum container so as to face a substrate-placing area of a sample electrode, is provided with an impurity-containing film that contains an impurity, and is formed on a top plate peripheral edge portion area that is a face exposable to a plasma generated in the vacuum container, and is located on a peripheral edge of a top plate center portion area that faces the center portion of the substrate-placing area.

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Notification of Transmittal of English translation of International Preliminary Report on Patentability issued in International Application No. PCT/JP2008/003705 filed Dec. 11, 2008.

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