Plasma doping apparatus and method, and method for...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S514000, C438S515000, C118S665000

Reexamination Certificate

active

07972945

ABSTRACT:
A top plate, disposed on an upper portion of a vacuum container so as to face a substrate-placing area of a sample electrode, is provided with an impurity-containing film that contains an impurity, and is formed on a top plate peripheral edge portion area that is a face exposable to a plasma generated in the vacuum container, and is located on a peripheral edge of a top plate center portion area that faces the center portion of the substrate-placing area.

REFERENCES:
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 5460708 (1995-10-01), Takeuchi et al.
patent: 6020592 (2000-02-01), Liebert et al.
patent: 6207537 (2001-03-01), Satoh et al.
patent: 6237527 (2001-05-01), Kellerman et al.
patent: 6660140 (2003-12-01), Buchanan et al.
patent: 6719886 (2004-04-01), Drewery et al.
patent: 7358511 (2008-04-01), Sasaki et al.
patent: 2004/0045507 (2004-03-01), Okumura et al.
patent: 2007/0111548 (2007-05-01), Sasaki et al.
patent: 2007/0176124 (2007-08-01), Sasaki et al.
patent: 61-183467 (1986-08-01), None
patent: 05-044025 (1993-02-01), None
patent: 05-320891 (1993-12-01), None
patent: 09-129615 (1997-05-01), None
patent: 11-214320 (1999-08-01), None
patent: 2004-047695 (2004-02-01), None
patent: 2005-005328 (2005-01-01), None
patent: WO 2004/109785 (2004-12-01), None
patent: WO 2006/121131 (2006-11-01), None
Notification of Transmittal of English translation of International Preliminary Report on Patentability issued in International Application No. PCT/JP2008/003705 filed Dec. 11, 2008.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma doping apparatus and method, and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma doping apparatus and method, and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma doping apparatus and method, and method for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2645155

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.