Semiconductor device having vertical transistor formed on an...

Details Semiconductor device having vertical transistor formed on an... Semiconductor device having vertical transistor formed on an...

2011-01-18

2011-01-18

Mai, Anh D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257SE29262

Reexamination Certificate

active

07872302

ABSTRACT:
A semiconductor device includes a first active pattern protruding from a substrate, a second active pattern on the first active pattern, a gate electrode enclosing a sidewall of the second active pattern, a conductive layer pattern on the first active pattern, a first impurity region in the first active pattern, and a second impurity region at a surface portion of the second active pattern. The first active pattern extending along a predetermined direction may have a first region and a second region. The second active pattern may have a pillar structure and the conductive layer pattern may include a metal or a metal compound.

REFERENCES:
patent: 5106775 (1992-04-01), Kaga et al.
patent: 5929477 (1999-07-01), McAllister Burns, Jr. et al.
patent: 6818937 (2004-11-01), Noble et al.
patent: 2007/0246783 (2007-10-01), Moon et al.
patent: 2008/0173937 (2008-07-01), Chung et al.
patent: 618875 (2006-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor device having vertical transistor formed on an... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having vertical transistor formed on an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having vertical transistor formed on an... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2645154