Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-02-13
2007-02-13
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Combined with the removal of material by nonchemical means
C438S778000, C438S782000, C438S783000, C438S786000, C257SE21273
Reexamination Certificate
active
10785235
ABSTRACT:
Methods of preparing a low-k dielectric material on a substrate are provided. The methods involve using plasma techniques to remove porogen from a precursor layer comprising porogen and a dielectric matrix and to protect the dielectric matrix with a silanol capping agent, resulting in a low-k dielectric matrix. Porogen removal and silanol capping can occur concurrently or sequentially. If performed sequentially, silanol capping is performed without first exposing the dielectric matrix to moisture or ambient conditions.
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Jeffrey M. Calvert and Michael K. Gallagher,
Humayun Raashina
Schulberg Michelle T.
Sun Jianing
Van Cleemput Patrick A.
Wang Feng
Beyer Weaver & Thomas LLP
Estrada Michelle
Novellus Systems Inc.
Toledo Fernando L.
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