Plasma CVD of silicon nitride thin films on large area glass sub

Details Plasma CVD of silicon nitride thin films on large area glass sub Plasma CVD of silicon nitride thin films on large area glass sub

1994-04-13

1995-03-21

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427573, 427570, 427578, 427579, 427166, 427167, 4272551, 4272552, 437241, B05D 306

Patent

active

053993870

ABSTRACT:
High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300.degree.-350.degree. C., and a pressure of at least 0.8 Torr. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single vacuum system.

REFERENCES:
patent: 495160 (1990-08-01), Maydan et al.
patent: 4668365 (1987-05-01), Foster et al.
patent: 4704300 (1987-11-01), Yamazaki
patent: 4751191 (1988-06-01), Gonsiorawski et al.
patent: 4877641 (1989-10-01), Dory
patent: 4892753 (1990-01-01), Wang et al.
Wolf et al. "Silicon Processing For The VLSI ERA", vol. 1, Lattice Press, 1986, pp. 191-194.

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