Plasma ashing process for removing photoresist and residues...

Details Plasma ashing process for removing photoresist and residues... Plasma ashing process for removing photoresist and residues...

2006-07-18

2006-07-18

Duda, Kathleen (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Removal of imaged layers

C430S320000, C134S001100

Reexamination Certificate

active

07078161

ABSTRACT:
A low temperature plasma ashing process for use with substrates comprising a ferroelectric material. The process generally includes plasma ashing the photoresist and residues at a temperature of about room temperature to about 140° C., wherein the plasma is generated from a gas mixture consisting essentially of hydrogen and an inert gas, and wherein the ferroelectric material is exposed to the plasma.

REFERENCES:
patent: 6320213 (2001-11-01), Kirlin et al.
patent: 6485988 (2002-11-01), Ma et al.
patent: 2001/0048622 (2001-12-01), Kwon et al.
patent: 2003/0032300 (2003-02-01), Waldfried et al.

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