Planarization process using tailored etchback and CMP

Details Planarization process using tailored etchback and CMP Planarization process using tailored etchback and CMP

1997-02-03

2000-02-15

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438626, 438633, 438645, 438723, 438704, 438734, 438750, 216 57, 216 89, 216 99, H01L 21302

Patent

active

060252707

ABSTRACT:
An improved and new method for forming a planarized integrated cirsuit structure has been developed. The method uses a combination of etchback and chemical/mechanical polishing (CMP), in which the etchback process uses a tailored mask to compensate for non-unifomity of material removal by the subsequent chemical/mechanical (CMP) process, thereby resulting in improved planarization and superior thickness uniformity.

REFERENCES:
patent: 4954459 (1990-09-01), Aranzino et al.
patent: 5015602 (1991-05-01), Van Der Plas et al.
patent: 5350486 (1994-09-01), Huang
patent: 5492858 (1996-02-01), Bose et al.
patent: 5498565 (1996-03-01), Grocho et al.
patent: 5874779 (1999-02-01), Matsuno

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