Photoresist composition and method of forming a photoresist...

Details Photoresist composition and method of forming a photoresist... Photoresist composition and method of forming a photoresist...

2005-01-11

2005-01-11

Huff, Mark F. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S322000, C430S396000, C430S005000, C430S270100

Reexamination Certificate

active

06841338

ABSTRACT:
A photoresist composition may include formulas 1 and 2: where R is an acetal group or a ter-butyloxy carbonyl (t-BOC) group, n and m are integers, n/(m+n) is 0.01−0.8, and m/(m+n) is 1−[n/(m+n)], where r is an integer between 8-40.A method for forming photoresist patterns may include forming a photoresist layer on a semiconductor substrate and exposing and developing the photoresist layer using a mask pattern that includes first areas having a light transmissivity of about 100% and second areas having a light transmissivity of between about 10% and about 30%.

REFERENCES:
patent: 5741613 (1998-04-01), Moon et al.
patent: 5789116 (1998-08-01), Kim
patent: 5814424 (1998-09-01), Shin
patent: 5851706 (1998-12-01), Lim et al.
patent: 5853921 (1998-12-01), Moon et al.
patent: 5895735 (1999-04-01), Yoon
patent: 6432588 (2002-08-01), Tzu et al.
patent: 6593056 (2003-07-01), Takeda et al.
patent: 20010055726 (2001-12-01), Kanna et al.

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