Photolithography method to prevent photoresist pattern collapse

Details Photolithography method to prevent photoresist pattern collapse Photolithography method to prevent photoresist pattern collapse

2004-09-15

2009-11-03

McPherson, John A (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S322000, C430S327000

Reexamination Certificate

active

07611825

ABSTRACT:
A method comprises forming a BARC layer on a substrate, treating the BARC layer to make its surface hydrophilic, forming a photoresist layer on the treated BARC layer, exposing the photoresist layer to a predetermined pattern, and developing the photoresist layer to form patterned photoresist.

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“Resist Pattern Collapse Prevention For The Sub-90nm Node”, Solid State Technology, Jul. 29, 2004, 6 pages.
Laura Peters, “Fine Today's Photoresists”, Feb. 1, 2004, 7 pages.

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